PMF170XP NXP Semiconductors, PMF170XP Datasheet
PMF170XP
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PMF170XP Summary of contents
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... PMF170XP P-channel Trench MOSFET Rev. 1 — 2 September 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low R Very fast switching 1.3 Applications ...
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... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET Version SOT323 [1] Min Max - -20 - [1] - -0.7 ≤ ...
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... T (°C) j Fig –1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET 120 I der (%) −75 − Normalized continuous drain current as a function of junction temperature (1) (2) ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMF170XP Product data sheet Conditions in free air – All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET Min Typ Max [1] - 377 430 [2] - 305 350 - ...
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... ° - -4 G(ext ° -0 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET Min Typ -20 - -0.65 -0 175 - 250 - 240 - 1 ...
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... I ( (1) T (2) T Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET (1) (2) −0.5 −1 ° (1) ...
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... GS Fig 11. Normalized drain-source on-state resistance as 017aaa134 (pF) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET 1.6 a 1.4 1.2 1.0 0.8 0.6 – function of junction temperature; typical ...
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... °C amb Fig 15. Gate charge waveform definitions –2 (A) –1.5 (1) –1.0 –0.5 0.0 0.0 –0.4 –0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 ...
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... Fig 17. Duty cycle definition PMF170XP Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-70 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION SOT323 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot323_fr solder lands solder resist occupied area 1.8 Dimensions in mm ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMF170XP v.1 20110902 PMF170XP Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2011 PMF170XP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMF170XP All rights reserved. Date of release: 2 September 2011 Document identifier: PMF170XP ...