PMN35EN NXP Semiconductors, PMN35EN Datasheet - Page 3

• Manufacturer Part Number: PMN35EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN35EN
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
I
10
10
der
D
120
10
80
40
10
–1
–2
1
0
2
10
−75
function of junction temperature
voltage
Normalized total power dissipation as a
I
(1) t
(2) t
(3) t
(4) t
(5) DC; T
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
–1
= single pulse
p
p
p
p
= 100 µs
= 1 ms
= 10 ms
= 100 ms
−25
Limit R
sp
amb
= 25 °C
= 25 °C; drain mounting pad 6 cm
DSon
25
= V
DS
/I
75
D
125
All information provided in this document is subject to legal disclaimers.
017aaa123
T
1
j
(°C)
175
Rev. 1 — 20 July 2011
2
Fig 2.
(%)
I
der
120
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
10
30 V, 5.1 A N-channel Trench MOSFET
−25
25
V
DS
(1)
(2)
(3)
(4)
(5)
(6)
75
(V)
PMN35EN
125
© NXP B.V. 2011. All rights reserved.
017aaa124
017aaa280
T
j
(°C)
175
10
2
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