PSMN2R2-30YLC NXP Semiconductors, PSMN2R2-30YLC Datasheet - Page 7

• Manufacturer Part Number: PSMN2R2-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
PSMN2R2-30YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
100
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
4.5
0.5
3.0
…continued
2.8
1
1.5
N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower
V
GS
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003a a f 888
V
(V) =
DS
(V)
2.6
2.4
2.2
Conditions
V
T
I
see
I
V
V
dI
see
S
S
2
j
GS
GS
GS
S
Rev. 02 — 3 May 2011
= 25 °C
= 25 A; V
= 25 A; dI
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 25 A;
Fig 7.
= 0 V; T
= 15 V; f = 1 MHz;
= 15 V
R
(mΩ)
DS on
DS
8
6
4
2
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
j
0
= 15 V;
= 25 °C;
4
PSMN2R2-30YLC
Min
-
-
-
-
-
-
8
Typ
18.4
0.8
37
37
21
16
12
© NXP B.V. 2011. All rights reserved.
003a a f 889
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
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