PSMN3R7-30YLC NXP Semiconductors, PSMN3R7-30YLC Datasheet - Page 3

• Manufacturer Part Number: PSMN3R7-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN3R7-30YLC
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
(A)
I
120
D
90
60
30
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
(1)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
T
003a a f677
mb
(°C)
200
Conditions
25 °C ≤ T
25 °C ≤ T
V
V
pulsed; t
see
T
MM (JEDEC JESD22-A115)
T
pulsed; t
V
V
see
Rev. 01 — 2 May 2011
mb
mb
GS
GS
GS
sup
Figure 4
= 25 °C; see
= 25 °C
Figure 3
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
Fig 2.
mb
mb
j(init)
GS
P
(%)
= 25 °C; see
= 100 °C; see
der
= 50 Ω; unclamped;
Figure 2
120
= 25 °C; I
80
40
0
mb
mb
function of mounting base temperature
Normalized total power dissipation as a
0
GS
= 25 °C;
= 25 °C
= 20 kΩ
D
= 100 A;
Figure 1
50
Figure 1
PSMN3R7-30YLC
100
Min
-
-
-20
-
-
-
-
-55
-55
-
350
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
-
Max
30
30
20
100
74
419
79
72
419
28
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
3 of 15