BLD6G21LS-50 NXP Semiconductors, BLD6G21LS-50 Datasheet - Page 12

• Manufacturer Part Number: BLD6G21LS-50
• Manufacturer: NXP Semiconductors

NXP Semiconductors
11. Abbreviations
12. Revision history
Table 12.
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Document ID
BLD6G21L-50_BLD6G21LS-50 v.2
Modifications:
BLD6G21L-50_BLD6G21LS-50 v.1
Revision history
Table 11.
Acronym
CCDF
CW
LDMOS
PAR
RF
SMD
TD-SCDMA
VSWR
Abbreviations
Release date
20100817
20091028
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TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
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Description
Complementary Cumulative Distribution Function
Continuous Wave
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Time Division-Synchronous Code Division Multiple Access
Voltage Standing-Wave Ratio
Figure 1 on page
Table 5 on page
Table 6 on page
Table 7 on page
Table 8 on page
Section 8.3 on page
Rev. 2 — 17 August 2010
BLD6G21L-50; BLD6G21LS-50
Data sheet status
Product data sheet
Objective data sheet
3: The typical value of R
3: The values of I
4: Several values have been changed or added.
4: Table has been added.
3: Some corrections have been made.
5: Figures have been updated.
DSX
have been changed.
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-
Change notice
th(j-case)
has been changed.
Supersedes
BLD6G21L-50_
BLD6G21LS-50 v.1
-
© NXP B.V. 2010. All rights reserved.
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