BLF642 NXP Semiconductors, BLF642 Datasheet
BLF642
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BLF642 Summary of contents
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... BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 1. Product profile 1.1 General description LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications ...
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... Thermal characteristics thermal resistance from junction to case is measured under RF conditions. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 BLF642 Broadband power LDMOS transistor Simplified outline Graphic symbol 1 [ Min ...
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... Application information Table Mode of operation CW, class-AB 7.1 Ruggedness in class-AB operation The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power. BLF642 Product data sheet Characteristics per section C; unless otherwise specified. drain-source breakdown voltage V ...
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... 1300 MHz 100 150 200 250 300 350 mA Dq Power gain as a function of load power; typical values BLF642 001aan776 (W) L © NXP B.V. 2011. All rights reserved ...
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... Dq = 150 200 250 300 350 mA Dq Third order intermodulation distortion as a function of average load power; typical values 001aao319 80 η D (%) (W) L BLF642 001aan778 30 (W) L(AV) © NXP B.V. 2011. All rights reserved ...
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... 200 mA 1300 MHz PAR and IMD as function of average load shldr power; typical values C11 C18 C13 24.4 mm C15 C14 10 C19 C12 BLF642 001aao320 12 PAR (dB (W) L(AV) + C20 - C17 C16 001aao322 © NXP B.V. 2011. All rights reserved. ...
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... Rev. 2 — 22 July 2011 Broadband power LDMOS transistor = 2.2; height = 0.762 mm; Copper (top/bottom m. Value 22 pF 5 6.2 pF 4 F 470 100 BLF642 Remarks [1] [2] [2] [2] [1] [1] [1] [1] [1] [3] © NXP B.V. 2011. All rights reserved ...
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... Rev. 2 — 22 July 2011 Broadband power LDMOS transistor 2.21 20.45 5.97 14.27 0.25 0.51 1.96 20.19 5.72 0.087 0.805 0.235 0.562 0.010 0.020 0.077 0.795 0.225 EUROPEAN PROJECTION BLF642 SOT467C E ISSUE DATE 99-12-06 99-12-28 © NXP B.V. 2011. All rights reserved ...
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... ESD HF LDMOS LDMOST PAR RF VSWR 11. Revision history Table 10. Revision history Document ID Release date BLF642 v.2 20110722 • Modifications: The status of this data sheet has been changed to Product data sheet • Table 5 on page • Table 6 on page • Section 8.1.3 on page • Section 8.1.4 on page • ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 BLF642 Broadband power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 BLF642 Broadband power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF642 All rights reserved. Date of release: 22 July 2011 Document identifier: BLF642 ...