BLF6G10L-260PRN NXP Semiconductors, BLF6G10L-260PRN Datasheet
BLF6G10L-260PRN
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BLF6G10L-260PRN Summary of contents
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... BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP test model DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... NXP Semiconductors 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G10L-260PRN (SOT539A BLF6G10LS-260PRN (SOT539B [1] Connected to flange. 3. Ordering information Table 3 ...
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... Table 7. Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3GPP test model DPCH Symbol P L(AV BLF6G10L-260PRN_LS-260PRN Product data sheet Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter ...
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... Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3 GPP test model DPCH; f otherwise specified. Symbol Parameter PAR 0 7.1 Ruggedness in class-AB operation The BLF6G10L-260PRN and BLF6G10L-260PRN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V 7.2 Impedance information Table 950 mA; main transistor V ...
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... MHz (3) % efficiency at 920 MHz (4) dB gain at 940 MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz Fig 2. (1) dB return loss at 940 MHz (2) dB return loss at 920 MHz (3) dB return loss at 960 MHz Fig 3. BLF6G10L-260PRN_LS-260PRN Product data sheet (dB) 22 (1) (2) 21 ...
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... MHz (5) dB gain at 920 MHz (6) dB gain at 960 MHz a. Gain and efficiency versus P IS95, PAR = 9 0.01% probability of the CCDF. Fig 4. Typical IS95 (gain; efficiency; ACPR1, ACPR2 and PAR versus P BLF6G10L-260PRN_LS-260PRN Product data sheet 014aab124 −30 60 ACPR1, ACPR2 (dBc) η ...
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... MHz (6) dB gain at 960 MHz a. Gain and efficiency versus P 3GPP, Test Model 1, 64 DPCH, PAR=7 0.01% probability per carrier. 5 MHz carrier spacing. Fig 5. Typical 2C-WCDMA (gain; efficiency; ACPR1, ACPR2 and PAR versus P BLF6G10L-260PRN_LS-260PRN Product data sheet 014aab122 −20 60 ACPR1, ACPR2 (dBc) η ...
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... Chomerics (2x) All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor C9 C13 NXP BLF6G10L-260PRN Output Rev 01 Code number Remarks see mechanical drawing. see PCB info. see PCB info. brass (nickel plated) brass (nickel plated) ...
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... DC-connector 8 pin male 2 × DC-connector 2 pin male 2 × bolt M3 2 × washer M3 solid copper wire (diam. 1 mm) flexible copper wire 4 × cable isolator (diam. 3 mm) 4 × cable isolator (diam. 2 mm) BLF6G10L-260PRN_LS-260PRN Product data sheet BLF6G10L(S)-260PRN Type Value 100 pF 10 μF 470 μF 10 Ω ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 7. Package outline SOT539A BLF6G10L-260PRN_LS-260PRN Product data sheet ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 8. Package outline SOT539B BLF6G10L-260PRN_LS-260PRN Product data sheet scale ...
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... CW DPCH EDGE GSM LDMOS LDMOST PAR RF VSWR W-CDMA BLF6G10L-260PRN_LS-260PRN Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications ...
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... NXP Semiconductors 11. Revision history Table 12. Revision history Document ID BLF6G10L-260PRN_LS-260PRN v.1 BLF6G10L-260PRN_LS-260PRN Product data sheet BLF6G10L(S)-260PRN Release date Data sheet status 20100812 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 Power LDMOS transistor Change notice ...
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... Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLF6G10L-260PRN_LS-260PRN Product data sheet [3] Definition This document contains data from the objective specification for product development. ...
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... Contact information For more information, please visit: For sales office addresses, please send an email to: BLF6G10L-260PRN_LS-260PRN Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10L-260PRN_LS-260PRN All rights reserved. Date of release: 12 August 2010 ...