BLF7G20LS-140P NXP Semiconductors, BLF7G20LS-140P Datasheet

BLF7G20LS-140P

Manufacturer Part Number
BLF7G20LS-140P
Description
Manufacturer
NXP Semiconductors
Datasheet

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BLF7G20LS-140P
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1. Product profile
Table 1.
Typical RF performance at T
Mode of operation
CW
GSM EDGE
Typical performance
1.1 General description
1.2 Features and benefits
1.3 Applications
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
f
(MHz)
1805 to 1880
1805 to 1880
case
BLF7G20LS-140P
Power LDMOS transistor
Rev. 2 — 17 August 2010
Excellent ruggedness
High efficiency
Low R
Designed for broadband operation (1800 MHz to 2000 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range
= 25
th
°
providing excellent thermal stability
C in a common source class-AB production test circuit.
I
(mA)
850
850
Dq
V
(V)
28
28
DS
P
(W)
125
60
L(AV)
G
(dB)
17
17.5
p
η
(%)
54
41
D
ACPR
(dBc)
-
−61
400k
ACPR
(dBc)
-
−75
Product data sheet
600k
EVM
(%)
-
2.7
rms

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BLF7G20LS-140P Summary of contents

Page 1

... BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance case Mode of operation f (MHz) CW 1805 to 1880 GSM EDGE 1805 to 1880 1 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G20LS-140P - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) BLF7G20LS-140P Product data sheet ...

Page 3

... EVM M Mode of operation: CW η D 7.1 Ruggedness in class-AB operation The BLF7G20LS-140P is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 850 mA BLF7G20LS-140P Product data sheet Characteristics C; per section unless otherwise specified. drain-source breakdown voltage ...

Page 4

... IMD η D (dBc) (%) 100 P ( 1879.95 MHz; 1 Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor 001aam399 70 η D (%) 120 150 180 P ( −10 −20 − ...

Page 5

... 850 mA 1880 MHz GSM-EDGE RMS EVM and peak EVM as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor −45 −50 −55 −60 ACPR 400k −65 − ...

Page 6

... 1080 mA 1880 MHz Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor −30 −40 −50 −60 −70 −80 ...

Page 7

... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor −20 −30 −40 ACPR −50 −60 − ...

Page 8

... F/m; thickness = 0.76 mm; thickness copper plating = 35 μm. r Typical impedance Z S Ω 1.1 − j3.8 1.3 − j3.7 1.2 − j3.8 gate Z S All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor C11 BLF7G20L-140P OUTPUT REV 1 C7 C10 001aal830 Z L Ω 1.8 − j2.8 1.7 − ...

Page 9

... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor ...

Page 10

... Voltage Standing Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20100817 Product data sheet • This document now only describes the BLF7G20LS-140P. • Table 1 on page 1: changed some values. • Table 4 on page 2: removed drain current specification. ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF7G20LS-140P All rights reserved. Date of release: 17 August 2010 ...

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