BLF7G20LS-140P NXP Semiconductors, BLF7G20LS-140P Datasheet
BLF7G20LS-140P
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BLF7G20LS-140P Summary of contents
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... BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance case Mode of operation f (MHz) CW 1805 to 1880 GSM EDGE 1805 to 1880 1 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G20LS-140P - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) BLF7G20LS-140P Product data sheet ...
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... EVM M Mode of operation: CW η D 7.1 Ruggedness in class-AB operation The BLF7G20LS-140P is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 850 mA BLF7G20LS-140P Product data sheet Characteristics C; per section unless otherwise specified. drain-source breakdown voltage ...
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... IMD η D (dBc) (%) 100 P ( 1879.95 MHz; 1 Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor 001aam399 70 η D (%) 120 150 180 P ( −10 −20 − ...
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... 850 mA 1880 MHz GSM-EDGE RMS EVM and peak EVM as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor −45 −50 −55 −60 ACPR 400k −65 − ...
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... 1080 mA 1880 MHz Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor −30 −40 −50 −60 −70 −80 ...
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... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor −20 −30 −40 ACPR −50 −60 − ...
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... F/m; thickness = 0.76 mm; thickness copper plating = 35 μm. r Typical impedance Z S Ω 1.1 − j3.8 1.3 − j3.7 1.2 − j3.8 gate Z S All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor C11 BLF7G20L-140P OUTPUT REV 1 C7 C10 001aal830 Z L Ω 1.8 − j2.8 1.7 − ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor ...
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... Voltage Standing Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20100817 Product data sheet • This document now only describes the BLF7G20LS-140P. • Table 1 on page 1: changed some values. • Table 4 on page 2: removed drain current specification. ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 August 2010 BLF7G20LS-140P Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF7G20LS-140P All rights reserved. Date of release: 17 August 2010 ...