BLF7G24L-140 NXP Semiconductors, BLF7G24L-140 Datasheet - Page 4

• Manufacturer Part Number: BLF7G24L-140
• Description: 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-140_7G24LS-140
Product data sheet
Fig 1.
Fig 3.
APCR
(dBc)
(dB)
G
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
18.5
17.5
−30
−40
−50
−60
−70
p
855
19
18
17
0
V
Single carrier IS-95 power gain as a function of
load power; typical values
0
V
Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
7.2 Single carrier IS-95
Dq
Dq
= 1300 mA.
= 1300 mA.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz
40
40
(2)
(2)
(1)
60
60
(1)
80
80
All information provided in this document is subject to legal disclaimers.
001aan523
001aan525
P
P
L
L
(W)
(W)
BLF7G24L-140; BLF7G24LS-140
100
100
Rev. 3 — 1 August 2011
Fig 2.
Fig 4.
APCR
(dBc)
(%)
η
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
D
−40
−50
−60
−70
−80
1980
50
40
30
20
10
0
0
0
V
Single carrier IS-95 drain efficiency as a
function of load power; typical values
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1300 mA.
= 1300 mA.
40
40
(2)
(1)
Power LDMOS transistor
60
60
(1)
(2)
© NXP B.V. 2011. All rights reserved.
80
80
001aan524
001aan526
P
P
L
L
(W)
(W)
100
100
4 of 14