BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet

135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz

BLF7G27L-135

Manufacturer Part Number
BLF7G27L-135
Description
135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BLF7G27L-135
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
135 W LDMOS power transistor for base station applications at frequencies from
2600 MHz to 2700 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
Mode of operation
IS-95
Single carrier W-CDMA
BLF7G27L-135
Power LDMOS transistor
Rev. 1 — 1 November 2011
Excellent ruggedness
High efficiency
Low R
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2600 MHz to 2700 MHz frequency range
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
th
Typical performance
providing excellent thermal stability
f
(MHz)
2600 to 2700
2600 to 2700
case
= 25
C in a common source class-AB production test circuit.
I
(mA) (V)
1300 28
1300 28
Dq
V
DS
P
(W)
25
45
L(AV)
G
(dB) (%) (dBc)
16.5 24
16.5 30
p
D
Objective data sheet
-
ACPR
45
[1]
885k
ACPR
(dBc)
-
30
[2]
5M

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BLF7G27L-135 Summary of contents

Page 1

... BLF7G27L-135 Power LDMOS transistor Rev. 1 — 1 November 2011 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 Single carrier W-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor Simplified outline Graphic symbol sym112 Version ...

Page 3

... C; unless otherwise specified. case Symbol P L(AV  D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G27L-135 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1300 mA BLF7G27L-135 Objective data sheet Characteristics Conditions ...

Page 4

... ( 2600 MHz ( 2700 MHz Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor aaa-000091 (1) ( ...

Page 5

... ( 2600 MHz ( 2700 MHz Fig 6. Single carrier IS-95 peak output power as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor aaa-000095 (1) ( ...

Page 6

... ( 2600 MHz ( 2700 MHz Fig 8. Pulsed CW drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor aaa-000097 (1) ( 120 160 200 P ...

Page 7

... ( 2600 MHz ( 2700 MHz Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor aaa-000099 (1) ( ...

Page 8

... ( 2600 MHz ( 2700 MHz Fig 14. Single carrier W-CDMA peak output power as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor aaa-000103 (1) ( ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor SOT502A ...

Page 10

... LDMOS LDMOST N-CDMA PAR RF VSWR W-CDMA 10. Revision history Table 9. Revision history Document ID Release date BLF7G27L-135 v.1 20111101 BLF7G27L-135 Objective data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Interim Standard 95 Laterally Diffused Metal Oxide Semiconductor ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 November 2011 BLF7G27L-135 Power LDMOS transistor © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 November 2011 Document identifier: BLF7G27L-135 All rights reserved. ...

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