BLL6H0514L-130 NXP Semiconductors, BLL6H0514L-130 Datasheet - Page 3

• Manufacturer Part Number: BLL6H0514L-130
• Description: 130 W LDMOS transistor intended for pulsed applications in the 0
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLL6H0514L-130_0514LS-130
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
f = 1.2 GHz to 1.4 GHz; T
test circuit.
Symbol
Symbol Parameter
V
I
I
g
R
Symbol
V
Z
V
I
P
G
RL

P
t
t
DSS
DSX
GSS
r
f
j
fs
th(j-c)
D
(BR)DSS
GS(th)
L
DS
droop(pulse)
DS(on)
p
= 25
in

C; per section unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Thermal characteristics
DC characteristics
RF characteristics
Parameter
transient thermal impedance from
junction to case
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 September 2010
case
= 25
p
= 300

C; unless otherwise specified, in a class-AB production

s;

= 10 %; RF performance at V
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 135 mA
Conditions
T
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
case
t
t
t
t
t
BLL6H0514L(S)-130
p
p
p
p
p
= 100 s;  = 10 %
= 200 s;  = 10 %
= 300 s;  = 10 %
= 100 s;  = 20 %
= 1 ms;  = 10 %
GS(th)
GS(th)
= 85 C; P
D
Conditions
P
P
P
P
P
P
P
DS
D
D
= 630 mA
+ 3.75 V;
+ 6.25 V;
DS
L
L
L
L
L
L
L
= 135 mA
= 135 mA
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
= 50 V
= 0 V
L
= 130 W
LDMOS driver transistor
DS
Min Typ Max Unit
130 -
-
15
7
45
-
-
-
Min Typ Max
100
1.3
-
15.8 18
-
806
-
= 50 V; I
© NXP B.V. 2010. All rights reserved.
17
50
20
-
10
0
6
-
1.8
-
-
-
200 275
Typ
0.17
0.22
0.25
0.23
0.36
Dq
-
50
-
-
-
0.3
50
50
-
2.25
1.4
-
140
1578 mS
= 50 mA;
Unit
K/W
K/W
K/W
K/W
K/W
3 of 13
W
V
dB
dB
%
dB
ns
ns
Unit
V
V
A
A
nA
m