BF1208D NXP Semiconductors, BF1208D Datasheet - Page 2

• Manufacturer Part Number: BF1208D
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
BF1208D_1
Product data sheet
1.4 Quick reference data
Table 1.
Per MOSFET unless otherwise specified.
[1]
[2]
[3]
[4]
Table 2.
Symbol Parameter
V
I
P
C
C
NF
Xmod
T
Pin
1
2
3
4
5
6
y
D
j
DS
tot
fs
iss(G1)
rss
T
Calculated from S-parameters.
Measured in
Measured in
sp
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
reverse transfer capacitance f = 100 MHz
noise figure
cross modulation
junction temperature
Quick reference data
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Figure 33
Figure 34
test circuit.
test circuit.
Rev. 01 — 16 May 2007
Conditions
DC
DC
T
f = 100 MHz; T
f = 100 MHz
Y
input level for k = 1 %;
f
f
at 40 dB AGC
w
unw
sp
S
amplifier A; I
amplifier B; I
amplifier A
amplifier B
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
amplifier A
amplifier B
= 50 MHz;
= Y
= 60 MHz
109 C
Simplified outline
S(opt)
6
1
D
D
j
= 25 C
5
2
= 19 mA
= 15 mA
Dual N-channel dual gate MOSFET
3
4
Symbol
[1]
[2]
[2]
[2]
[3]
[4]
Min Typ
-
-
-
26
25
-
-
-
-
-
102
102
-
G1A
G1B
G2
BF1208D
© NXP B.V. 2007. All rights reserved.
-
-
-
31
30
2.1
2.1
30
0.9
1.4
105
105
-
AMP B
AMP A
sym089
Max Unit
6
30
180
41
40
2.6
2.6
-
1.5
2.0
-
-
150
DA
S
DB
V
mA
mW
mS
mS
pF
pF
fF
dB
dB
dB V
dB V
2 of 22
C