BF1212 NXP Semiconductors, BF1212 Datasheet - Page 7

• Manufacturer Part Number: BF1212
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 Nov 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
Fig.9
Fig.11 Drain current as a function of gate 1 and
(1) R
(2) R
(3) R
(4) R
V
T
j
DS
(mA)
= 25 C.
(mA)
I D
I D
= 5 V; V
24
16
20
16
12
8
0
8
4
0
G1
G1
G1
G1
0
0
= 100 k.
= 47 k.
= 56 k.
= 82 k.
Drain current as a function of gate 1 current;
typical values.
drain supply voltage; typical values.
G2-S
10
= 4 V.
(5) R
(6) R
(7) R
(8) R
2
20
G1
G1
G1
G1
= 120 k.
= 150 k.
= 180 k.
= 220 k.
(1)
30
4
V
R
see Fig.21.
V GG = V DS (V)
G2-S
G1
connected to V
40
= 4 V; T
I G1 (μA)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
MLE237
MLE239
j
= 25 C.
50
6
GG
;
7
handbook, halfpage
handbook, halfpage
V
R
Fig.10 Drain current as a function of gate 1 supply
Fig.12 Drain current as a function of gate 2
(1) V
(2) V
(3) V
DS
G1
(mA)
(mA)
I D
I D
= 5 V; V
= 150 k (connected to V
16
12
16
12
BF1212; BF1212R; BF1212WR
8
4
0
GG
GG
GG
8
4
0
0
0
= 4.5 V.
= 5 V.
= 4 V.
voltage; typical values.
voltage; typical values.
G2-S
= 4 V; T
1
(4) V
(5) V
j
2
= 25 C.
GG
GG
2
GG
= 3.5 V.
= 3 V.
); see Fig.21.
3
V
R
(connected to V
see Fig.21.
4
DS
G1
Product specification
= 5 V; T
= 150 k
V G2-S (V)
4
V GG (V)
(1)
(2)
(3)
(4)
(5)
MLE238
MLE240
j
= 25 C.
GG
5
6
);