BF1214 NXP Semiconductors, BF1214 Datasheet - Page 13

• Manufacturer Part Number: BF1214
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1214_1
Product data sheet
Fig 20. Amplifier B: input admittance as a function of
Fig 22. Amplifier B: reverse transfer admittance and
b
(mS)
is
( S)
|y
, g
10
10
rs
10
10
10
10
|
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(B)
10
D(B)
DS(B)
DS(B)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
DS(A)
rs
rs
DS(A)
is
is
|
f (MHz)
f (MHz)
= 0 V;
= 0 V;
001aah011
001aah013
Rev. 01 — 30 October 2007
10
10
3
3
10
(deg)
10
10
1
3
rs
2
Fig 21. Amplifier B: forward transfer admittance and
Fig 23. Amplifier B: output admittance as a function of
b
os
(mS)
(mS)
|y
10
10
, g
fs
10
|
10
10
os
1
1
2
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(B)
D(B)
DS(B)
DS(B)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
DS(A)
os
os
DS(A)
fs
fs
|
f (MHz)
f (MHz)
= 0 V;
= 0 V;
© NXP B.V. 2007. All rights reserved.
001aah012
001aah014
BF1214
10
10
3
3
10
(deg)
10
1
13 of 18
2
fs