STPS40L40C STMicroelectronics, STPS40L40C Datasheet

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STPS40L40C

Manufacturer Part Number
STPS40L40C
Description
Low Drop Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
n
n
n
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-220AB and TO-247 this device is
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed: 7A
Symbol
I
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
FSM
RSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2 x 20 A
150 °C
0.49 V
40 V
Parameter
Tc = 130 C
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
STPS40L40CT
TO-220AB
STPS40L40CT/CW
Per diode
Per device
A1
A2
A1
K
A2
- 65 to + 150
STPS40L40CW
10000
Value
8100
230
150
40
30
20
40
2
3
TO-247
K
A1
Unit
V/µs
K
W
V
A
A
A
A
A
C
C
A2
1/5

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STPS40L40C Summary of contents

Page 1

... V TO-220AB STPS40L40CT Parameter Tc = 130 Sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25°C STPS40L40CT/ TO-247 STPS40L40CW Value Per diode Per device 40 230 2 3 8100 - 150 150 10000 Unit ...

Page 2

... STPS40L40CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

Page 3

... Tj=125°C 10 Tj=75°C Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=25°C Tc=75°C 0.4 = 0.2 = 0.1 Tc=125°C 0.2 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 1.0 VR(V) 0 1.0 1.2 1.4 1.6 STPS40L40CT/CW Single pulse tp(s) 1E-3 1E-2 1E-1 VR( =tp/T tp 1E+0 F=1MHz Tj=25° 3/5 ...

Page 4

... STPS40L40CT/CW PACKAGE MECHANICAL DATA TO-220AB H2 Dia COOLING METHOD : C n RECOMMENDED TORQUE VALUE : 0.55M.N n MAXIMUM TORQUE VALUE : 0.70 M.N n 4/5 REF. Millimeters Min 4. 1. 0.49 F 0.61 F1 1.14 F2 1. 16.4 typ 2. 15.25 L7 6.20 L9 3.50 M 2.6 typ. Diam. 3.75 DIMENSIONS Inches Max ...

Page 5

... MAXIMUM TORQUE VALUE : 1.0M.N n Ordering type Marking STPS40L40CT STPS40L40CT STPS40L40CW STPS40L40CW EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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