STPS30L60C STMicroelectronics, STPS30L60C Datasheet - Page 2

• Manufacturer Part Number: STPS30L60C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
Table 2.
1. For temperature or pulse time duration deratings, refer to
2. Refer to
3.
Table 3.
When the diodes 1 and 2 are used simultaneously:
Δ
2/12
Symbol
Symbol
V
V
P
I
Tj(diode 1) = P(diode1) x R
R
V
F(RMS)
ARM
I
ASM
dV/dt
R
I
ARM
I
F(AV)
T
RRM
FSM
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
th(j-c)
RRM
th(c)
T
dPtot
stg
dTj
j
(1)
(2)
(2)
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Maximum repetitive peak avalanche voltage
Maximum single pulse peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
Critical rate of rise reverse voltage
Junction to case
Coupling
Figure
Rth(j-a)
1
Characteristics
Absolute ratings (limiting values, per diode)
Thermal resistances
14.
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
(Per diode) + P(diode 2) x R
TO-220AB, I
D
TO-220FPAB, δ = 0.5
2
PAK, TO-247, δ = 0.5
TO-220AB, I
TO-220FPAB
TO-220AB, I
TO-220FPAB
Parameter
Parameter
Doc ID 6479 Rev 9
2
PAK,
(3)
2
2
Figure 4
PAK, D
PAK, D
2
2
and
PAK, TO-247
PAK, TO-247
T
T
t
t
t
t
I
t
I
p
p
p
p
AR
p
AR
c
c
= 2 µs square, F = 1 kHz
= 10 ms, sinusoidal
= 1 µs, T
< 1 µs, T
< 1 µs, T
Figure
= 130 °C
= 110 °C
< 29 A
< 29 A
th(c)
5. More details regarding the avalanche
j
j
j
= 25 °C
< 150 °C,
< 150 °C,
Per diode
Per device
Per diode
Per device
Per diode
Total
Per diode
Total
-65 to + 175
10000
Value
Value
7800
3.95
230
150
1.5
0.8
4.7
0.1
3.2
60
30
15
30
15
30
80
80
2
STPS30L60C
°C/W
V/µs
Unit
Unit
W
°C
°C
V
A
A
A
A
V
V