STPS120MF STMicroelectronics, STPS120MF Datasheet - Page 2

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STPS120MF

Manufacturer Part Number
STPS120MF
Description
Power Schottky rectifier in flat package
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS120MF

Very Low Profile Package
0.85 mm

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Characteristics
1
2/7
Characteristics
Table 2.
1.
Table 3.
1. Mounted with minimum recommended pad size, PC board FR4
Table 4.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.34 x I
Symbol
V
Symbol
R
I
Symbol
I
R
V
F(RMS)
dPtot
---------------
R
F
I
P
dV/dt
th(j-a)
I
(1)
F(AV)
T
dTj
(1)
FSM
ARM
RRM
th(j-c)
T
stg
j
<
(1)
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
F(AV)
(
Absolute ratings (limiting values)
1
Thermal resistance
Static electrical characteristics
Repetitive peak reverse voltage
Forward current rms
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage (rated V
Junction to case
Junction to ambient
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.07 I
Parameter
F
2
(RMS)
Parameter
Parameter
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
j
j
= 25° C
= 100° C
= 25° C
= 100° C
= 25° C
= 100° C
= 25° C
= 100° C
= 25° C
= 100° C
Test conditions
T
t
t
p
p
c
(1)
= 10 ms sinusoidal
= 1 µs T
V
V
V
I
I
= 140 °C δ = 0.5
F
F
R
R
R
= 1 A
= 2 A
= V
= 10 V
= 5 V
R
, T
RRM
j
j
= 25 °C)
= 25 °C
Min.
Value
250
20
-65 to + 150
Typ.
0.44
0.36
0.48
0.42
275
145
105
1.3
0.6
0.4
10000
Value
1400
150
20
50
2
1
STPS120MF
Max.
0.49
0.41
0.54
0.48
850
450
300
3.9
2.0
10.
°C/W
°C/W
Unit
V/µs
Unit
°C
°C
W
V
A
A
A
Unit
µA
V

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