STTH602C STMicroelectronics, STTH602C Datasheet - Page 3

• Manufacturer Part Number: STTH602C
• Description: Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Specifications of STTH602C

• Insulated Package: TO-220FPAB

STTH602C
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
RM
t
t
FP
rr
fr
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0.0
0.0
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
δ
Dynamic characteristics
0.5
Peak current versus duty cycle
(per diode)
Forward voltage drop versus
forward current (maximum values
per diode)
P = 10 W
P = 10 W
0.2
1.0
0.3
P = 5 W
P = 5 W
Parameter
0.4
T
j
=150°C
1.5
P = 3 W
P = 3 W
0.5
V
FM
T
(V)
j
=25°C
2.0
0.6
0.7
2.5
I
I
M
M
δ
d
=tp/T
=tp/T
0.8
3.0
T
T
0.9
I
V
I
V
I
V
I
V
I
T
tp
tp
F
F
F
F
F
j
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 3 A, dI
= 3 A, dI
= 3 A, dI
= 25 °C
1.0
3.5
= 30 V, T
= 30 V, T
= 160 V, T
= 1.1 x V
Test conditions
F
F
F
F
F
Figure 2.
Figure 4.
/dt = -100 A/µs,
/dt = -50 A/µs,
/dt = 200 A/µs,
/dt = 200 A/µs
/dt = 200 A/µs,
j
j
= 25 °C
= 25 °C
Fmax
j
= 125 °C
, T
100
1.0
0.1
80
60
40
20
1.E-03
0
0.0
j
= 25 °C
Single pulse
TO-220AB
forward current (typical values per
diode)
impedance junction to case versus
pulse duration (T0-220AB)
Forward voltage drop versus
0.5
Relative variation of thermal
1.0
1.E-02
T
j
=150°C
1.5
tp(s)
Min.
T
V
j
=25°C
FM
(V)
2.0
1.E-01
Typ
3.7
14
21
24
4
2.5
Characteristics
Max.
3.0
5.5
20
30
1.E+00
3.5
Unit
ns
ns
A
V
3/9