STTH9012TV STMicroelectronics, STTH9012TV Datasheet - Page 4

• Manufacturer Part Number: STTH9012TV
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/8
Figure 3.
Figure 5.
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1000
1.E-03
900
800
700
600
500
400
300
200
Z
S factor
0
th(j-c)
t (ns)
0
Single pulse
rr
/R
50
50
I
F
th(j-c)
=0.5 x I
Relative variation of thermal
impedance junction to case
versus pulse duration
Reverse recovery time versus
dI
Softness factor versus
dI
100
1.E-02
100
I
F
= 2 x I
F(AV)
F
F
/dt (typical values)
/dt (typical values)
F(AV)
150
150
I
I
F
F
dI /dt(A/µs)
= I
= I
F(AV
F(AV
F
200
200
dI /dt(A/µs)
)
)
F
1.E-01
250
250
t (s)
p
300
300
350
1.E+00
350
400
400
I
F
V
T
= 2 x I
R
j
V
T
=125°C
=600V
j
R
=125°C
=600V
450
450
F(AV)
1.E+01
500
500
Figure 4.
Figure 6.
Figure 8.
12
10
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
I
0
Q (µC)
25
RM
rr
V
T
(A)
j
R
=125°C
V
T
=600V
50
50
j
R
=125°C
=600V
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
Q
RR
F
50
I
I
/dt (typical values)
F
F
=0.5 x I
=0.5 x I
I
RM
150
150
F(AV)
F(AV)
S
200
200
factor
t
t
F
RR
RR
dI /dt(A/µs)
/dt (typical values)
I
I
F
F
F
= I
= I
250
250
dI /dt(A/µs)
75
F(AV)
F(AV)
F
300
300
T (°C)
j
I
350
F
350
= 2 x I
I
F
= 2 x I
Reference: T
100
F(AV)
STTH9012TV
400
400
I
F
F(AV)
= I
V
I
F
R
I
F
= I
F(AV)
=600V
=0.5 x I
F(AV)
j
450
=125°C
450
F(AV)
500
500
125