STTH3012 STMicroelectronics, STTH3012 Datasheet - Page 4

• Manufacturer Part Number: STTH3012
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/9
Figure 3.
Figure 5.
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
800
700
600
500
400
300
200
3.0
2.5
2.0
1.5
1.0
0.5
1.E-03
0
Z
S factor
0
t (ns)
th(j-c)
rr
Single pulse
50
50
/R
th(j-c)
100
Relative variation of thermal
impedance junction to case
versus pulse duration
Reverse recovery time versus
dI
100
Softness factor versus dI
(typical values)
I =2 x I
F
F
/dt (typical values)
F(AV)
I =I
F
150
150
1.E-02
F(AV)
200
200
dI /dt(A/µs)
dI /dt(A/µs)
I =0.5 x I
F
F
F
t (s)
p
250
250
F(AV)
300
300
1.E-01
350
350
400
400
F
/dt
V =600V
T =125°C
450
450
I
V =600V
T =125°C
F
R
j
R
j
≤
2xI
1.E+00
F(AV)
500
500
Figure 4.
Figure 6.
Figure 8.
60
55
50
45
40
35
30
25
20
15
10
8
7
6
5
4
3
2
1
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
5
0
0
Q (µC)
0
I
25
RM
rr
V =600V
T =125°C
V =600V
T =125°C
R
j
j
R
(A)
50
50
I =0.5 x I
F
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
I
Q
RM
F
F(AV)
RR
50
/dt (typical values)
150
S factor
150
I =I
F
F(AV)
200
200
I =2 x I
F
dI /dt(A/µs)
F
dI /dt(A/µs)
I =0.5 x I
/dt (typical values)
I =2 x I
F
F
F
F
F(AV)
I =I
F
T (°C)
250
250
t
rr
j
F(AV)
75
F(AV)
F(AV)
300
300
350
350
100
400
Reference: T =125°C
400
V =600V
STTH3012
I =I
F
R
F(AV)
450
450
j
500
500
125