STTH6012 STMicroelectronics, STTH6012 Datasheet - Page 4

• Manufacturer Part Number: STTH6012
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/8
Figure 3.
Figure 5.
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
2.00
1.75
1.50
1.25
1.00
0.75
0.50
900
800
700
600
500
400
300
200
1.E-03
Z
0
0
S factor
th(j-c)
Single pulse
t (ns)
rr
50
50
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse recovery time versus
dI
Softness factor versus dI
(typical values)
100
100
F
/dt (typical values)
1.E-02
150
150
I =2 x I
F
F(AV)
200
dI /dt(A/µs)
200
dI /dt(A/µs)
F
I =I
F
F
t (s)
p
F(AV)
250
250
I =0.5 x I
F
300
300
1.E-01
F(AV)
350
350
400
400
F
/dt
I
V =600V
T =125°C
F
450
450
V =600V
T =125°C
j
R
≤
R
j
2xI
1.E+00
F(AV)
500
500
Figure 4.
Figure 6.
Figure 8.
80
70
60
50
40
30
20
10
12
10
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
8
6
4
2
0
0
0
I
Q (µC)
25
RM
V =600V
T =125°C
rr
V =600V
T =125°C
R
j
R
j
(A)
50
50
I =0.5 x I
F
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
F(AV)
Q
I
F
RM
RR
50
/dt (typical values)
150
150
S factor
I =I
F
F(AV)
200
200
t
dI /dt(A/µs)
F
rr
I =2 x I
dI /dt(A/µs)
F
I =0.5 x I
I =2 x I
F
/dt (typical values)
F
F
F
I =I
F
T (°C)
250
250
F(AV)
F(AV)
j
75
F(AV)
F(AV)
300
300
350
350
100
400
400
Reference: T =125°C
STTH6012
V =600V
I =I
F
R
F(AV)
450
450
j
500
500
125