STGW25H120DF STMicroelectronics, STGW25H120DF Datasheet

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STGW25H120DF

Manufacturer Part Number
STGW25H120DF
Description
25 A, 1200 V field stop trench gate IGBT with Ultrafast diode
Manufacturer
STMicroelectronics
Datasheet

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Features
Applications
Description
Using advanced proprietary trench gate and field
stop structure, this IGBT leads to an optimized
compromise between conduction and switching
losses maximizing the efficiency for high
switching frequency converters. Furthermore, a
slightly positive V
and a very tight parameters distribution result in
an easy paralleling operation.
Table 1.
April 2011
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Very high speed switching
Tight parameters distribution
Easy paralleling
Ultra fast free-wheeling diode co-packaged
Low thermal resistance
Uninterruptible power supply
Welding machines
Photovoltaic inverters
Power factor correction
High switching frequency converters
STGW25H120DF
Order code
25 A, 1200 V, field stop trench gate IGBT with Ultrafast diode
Device summary
CE(on)
temperature coefficient
GW25H120DF
Marking
Doc ID 17462 Rev 2
Figure 1.
Package
TO-247
Internal schematic diagram
STGW25H120DF
TO-247
1
Packaging
2
3
Tube
Preliminary data
www.st.com
1/9
9

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STGW25H120DF Summary of contents

Page 1

... Order code STGW25H120DF April 2011 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Figure 1. Marking Package GW25H120DF TO-247 Doc ID 17462 Rev 2 STGW25H120DF Preliminary data TO-247 Internal schematic diagram Packaging Tube www.st.com 1/9 ...

Page 2

... Thermal resistance junction-case diode thJC R Thermal resistance junction-ambient thJA 2/9 Parameter = ° 100 ° ° ° Parameter Doc ID 17462 Rev 2 STGW25H120DF Value Unit 1200 100 A ±20 V 330 100 – 150 °C – 175 ...

Page 3

... STGW25H120DF 2 Electrical characteristics °C unless otherwise specified. J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V Table 5. Dynamic Symbol Input capacitance C ies Output capacitance C oes ...

Page 4

... Parameter Test conditions di/dt = 100 A/µs (see Figure 125 °C, J di/dt = 100 A/µs (see Figure 5) Doc ID 17462 Rev 2 STGW25H120DF Min. Typ TBD TBD GE TBD = TBD = TBD TBD = 25 A TBD C ...

Page 5

... STGW25H120DF 3 Test circuits Figure 2. Test circuit for inductive load switching Figure 4. Switching waveform Figure 3. Gate charge test circuit Figure 5. Diode recovery time waveform Doc ID 17462 Rev 2 Test circuits 5/9 ...

Page 6

... ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Table 9. TO-247 mechanical data Dim ∅P ∅R S 6/9 mm Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 17462 Rev 2 STGW25H120DF ® Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 7

... STGW25H120DF Figure 6. TO-247 drawing Doc ID 17462 Rev 2 Package mechanical data 0075325_F 7/9 ...

Page 8

... Revision history 5 Revision history Table 10. Document revision history Date 07-May-2010 05-Apr-2011 8/9 Revision 1 Initial release. Document status promoted from target specification to preliminary 2 data. Doc ID 17462 Rev 2 STGW25H120DF Changes ...

Page 9

... STGW25H120DF Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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