STB80NF55-06T STMicroelectronics, STB80NF55-06T Datasheet - Page 4

• Manufacturer Part Number: STB80NF55-06T
• Description: N-channel 55 V, 5 mOhm, 80 A STripFET(TM) II Power MOSFET in a D2PAK package
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
1. Tested @V
2. Guaranteed by process.
Table 5.
V
V
Symbol
Symbol
CASE
R
V
I
GS(th)
(BR)DSS
GSS
V
V
V
t
t
I
C
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
Q
BR0
BR1
BR2
oss
t
t
iss
rss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
(2)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source
on-resistance
GS
On/off states
Dynamic
= ±22 V at wafer level.
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 022702 Rev 1
I
V
V
V
V
V
V
V
Tj=175 °C, V
I
V
D
D
V
V
V
R
(see
V
V
(see
GS
GS
GS
DS
DS
GS
DS
GS
GS
GS
= 250 µA, V
= 1 mA
DS
DD
DD
G
= 1.5 V, I
= 1.5 V, I
= 1.5 V, I
Test conditions
= 55 V
= 55 V, T
= ± 20 V
= V
= 10 V, I
= 4.7 Ω V
Test conditions
= 25 V, f = 1 MHz,
= 0
= 4.5 V, R
= 27 V, I
= 44 V, I
Figure
Figure
GS
, I
D
D
D
D
DS
D
13)
14)
C
D
GS
D
GS
= 250 µA
= 250 µA
= 10 mA
= 100 mA
= 40 A
= 125 °C
G
= 60 A
= 80 A,
= V
= 10 V
= 10 Ω
=0
GS
Min.
Min.
55
40
40
40
2
1
-
-
-
4400
1020
Typ.
Typ.
60.5
350
155
125
142
5.0
27
65
29
STB80NF55-06T
Max.
Max.
±100
193
100
6.5
10
4
Unit
Unit
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V