AP2309GN Advanced Power Electronics Corp., AP2309GN Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness

AP2309GN

Manufacturer Part Number
AP2309GN
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2309GN

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
75
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
5
Qgs (nc)
1
Qgd (nc)
3
Id(a)
-3.7
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2309GN
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP2309GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-23
D
G
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
- 3.7
1.38
0.01
- 30
±20
-12
- 3
DS(ON)
DSS
Value
90
AP2309GN
D
S
200801142
75mΩ
- 3.7A
-30V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
1

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AP2309GN Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter Parameter 3 AP2309GN RoHS-compliant Product BV -30V DSS R 75mΩ DS(ON 3. Rating Units - 30 ±20 - 3.7 ...

Page 2

... AP2309GN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.6 I =3A D =-2. 1.4 o =25 C 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1 0.9 0.7 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP2309GN o = 150 C -10V -7.0V -5.0V -4. . Drain-to-Source Voltage (V) DS =10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...

Page 4

... AP2309GN -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Circuit ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT- Part Marking Information & Packing : SOT-23 NBXX SYMBOLS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. A2 Part Number : NB Date Code : XX Millimeters MIN NOM MAX 1.00 1.15 1.30 0.00 -- 0.10 0.10 0.15 0.25 0.30 0.40 0.50 1.70 2.00 2.30 2.70 2.90 3.10 2.40 2.65 3.00 1.40 1.50 1.60 5 ...

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