AP4528GM Advanced Power Electronics Corp., AP4528GM Datasheet - Page 2

• Manufacturer Part Number: AP4528GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4528GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 52
• Qg (nc): 7
• Qgs (nc): 1.2
• Qgd (nc): 3.4
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
N-CH Electrical Characteristics@T
Source-Drain Diode
AP4528GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
j
j
=25
=70
o
o
C)
C)
j
2
=25
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=5A
=1A
=1.5A, V
=5A, V
o
=3.3Ω,V
=20Ω
C(unless otherwise specified)
=V
=5V, I
=40V, V
=32V, V
=30V
=20V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
GS
Test Conditions
Test Conditions
GS
, I
D
D
GS
D
=10mA
=5A
=0V
D
GS
D
=250uA
GS
GS
=5A
=0V
=3A
=10V
=0V
=0V
Min.
Min.
40
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
380
1.2
3.4
18
70
55
19
13
5
7
4
9
4
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
610
1.3
36
52
25
12
3
1
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
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