AP9563GK Advanced Power Electronics Corp., AP9563GK Datasheet

AP9563GK

Manufacturer Part Number
AP9563GK
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9563GK

Vds
-40V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
40
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
20
Qgs (nc)
4
Qgd (nc)
10
Id(a)
6.8
Pd(w)
2.8
Configuration
Single P
Package
SOT-223
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
low on-resistance and cost-effectiveness.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-223
D
G
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S
3
RoHS-compliat Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
0.02
-6.8
-5.4
+25
-40
-30
2.8
DS(ON)
DSS
Value
45
AP9563GK
D
S
40mΩ
200811032
-6.8A
-40V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
1

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AP9563GK Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-223 Parameter Parameter 3 AP9563GK RoHS-compliat Product BV -40V DSS R 40mΩ DS(ON) I -6. Rating Units - ...

Page 2

... AP9563GK Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =-10V G ℃ 1.6 1.2 0.8 0.4 11 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.5 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9563GK -10V -7. -5.0V -4. . Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP9563GK - -32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Gate-to-Source Voltage (V) GS Fig 11 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-223 Part Marking Information & Packing : SOT-223 9563GK YWWSSS SYMBOLS MIN 0.60 G 0.25 E 6.30 F 1. 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Meet Rohs requirement for low voltage MOSFET only ...

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