AP4578GH-HF Advanced Power Electronics Corp., AP4578GH-HF Datasheet

AP4578GH-HF

Manufacturer Part Number
AP4578GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4578GH-HF

Vds
60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
72
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
9
Qgs (nc)
2
Qgd (nc)
5
Id(a)
9
Pd(w)
8.9
Configuration
Complementary N-P
Package
TO-252-4L
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
S1
G1
3
3
S2
G2
TO-252-4L
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
N-channel
3
N-CH BV
P-CH BV
+25
60
9
6
30
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
8.9
0.07
R
I
R
I
D
D
P-channel
D1
DS(ON)
DS(ON)
AP4578GH-HF
DSS
DSS
Value
S1
+25
110
-60
-30
14
-6
-4
G2
125mΩ
201108113
72mΩ
-60V
Units
W/℃
Units
℃/W
℃/W
60V
-6A
9A
W
V
V
A
A
A
D2
S2
1

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AP4578GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 3 AP4578GH-HF Halogen-Free Product N-CH BV 60V DSS R 72mΩ DS(ON P-CH BV -60V DSS R 125mΩ DS(ON) I -6A ...

Page 2

... AP4578GH-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =-48V DS V =-4. =-30V =3.3Ω, =30Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-3A =-3A dI/dt=-100A/µs AP4578GH-HF Min. Typ. -60 - =-1mA - -0. ...

Page 4

... AP4578GH-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance o =150 AP4578GH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0. 0.02 t 0.01 Duty factor = t/T Single Pulse Peak ...

Page 6

... AP4578GH-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 135 125 115 105 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms DC 0.01 0.00001 10 100 Fig 10. Effective Transient Thermal Impedance o =150 Fig 12. Gate Charge Waveform AP4578GH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Single Pulse Peak ...

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