AP18P10GS Advanced Power Electronics Corp., AP18P10GS Datasheet
AP18P10GS
Specifications of AP18P10GS
Related parts for AP18P10GS
AP18P10GS Summary of contents
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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP18P10GS RoHS-compliant Product BV -100V DSS R 160mΩ DS(ON) I -12A TO-263(S) S Rating Units -100 ±20 ...
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... AP18P10GS Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2 -10V G 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance 2.0 1 1.0 0.5 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP18P10GS -10V o C -7.0V -5.0V -4. -3. Drain-to-Source Voltage ( 100 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP18P10GS Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = 12.5 10 7 ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 XXXXXS 18P10GS YWWSSS YWWSSS θ θ Part Number Part Number Package Code Package Code LOGO ...