IRF630 Advanced Power Electronics Corp., IRF630 Datasheet
IRF630
Specifications of IRF630
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IRF630 Summary of contents
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... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter IRF630 RoHS-compliant Product BV 200V DSS R 0.4Ω DS(ON TO-220( Rating Units 200 ±20 9.0 5 ...
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... IRF630 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 3 I =5. =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. IRF630 10V .0V 7 . Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...
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... IRF630 12 I =5. =40V DS V =100V =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...