SKM50GAL12T4 SEMIKRON, SKM50GAL12T4 Datasheet

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... SKM50GAL12T4 ® SEMITRANS 2 Fast IGBT4 Modules SKM50GAL12T4 Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...

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... SKM50GAL12T4 ® SEMITRANS 2 Fast IGBT4 Modules SKM50GAL12T4 Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • ...

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... SKM50GAL12T4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 08.03.2010 = ...

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... SKM50GAL12T4 Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 0 – 08.03.2010 ...

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... SKM50GAL12T4 SEMITRANS 2 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...