SEMiX604GAL12E4s SEMIKRON, SEMiX604GAL12E4s Datasheet
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Manufacturer Part Number
SEMiX604GAL12E4s
Specifications of SEMiX604GAL12E4s
Family/system
SEMiX
Voltage (v)
1200
Current (a)
600
Chip-type
IGBT 4 (Trench)
SEMiX604GAL12E4s
Trench IGBT Modules
SEMiX604GAL12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• Dynamic values apply to the
© by SEMIKRON
SEMiX
coefficient
max.
T
following combination of resistors:
R
R
R
R
j
CE(sat)
Gon,main
Goff,main
G,X
E,X
=150°C
= 0,5
= 2,2
with positive temperature
= 1,0
= 6,2
®
4s
GAL
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Freewheeling diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
C
Cnom
CRM
F
Fnom
FRM
FSM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
CE
CES
GES
j
j
j
stg
isol
CE(sat)
CE0
GE(th)
ies
oes
res
Gint
G
Rev. 0 – 16.11.2010
T
V
V
V
T
t
T
t
I
V
chiplevel
V
V
V
V
V
V
T
Conditions
I
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
p
p
C
CRM
FRM
FRM
j
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
GE
= 10 ms, sin 180°, T
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 175 °C
= 600 A
= 25 °C
=V
= 1200 V
= 25 V
= 800 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 3xI
= 3xI
= 3xI
≤ 1200 V
CE
, I
Fnom
Fnom
Cnom
C
= 24 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
c
c
j
c
c
c
c
j
j
j
j
j
j
j
j
j
j
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1800
1800
3240
1800
3240
4000
3400
typ.
0.12
37.2
2.32
2.04
1.25
916
704
600
707
529
600
707
529
600
600
1.8
2.2
0.8
0.7
1.7
2.5
5.8
10
max.
2.05
0.36
2.4
0.9
0.8
1.9
2.7
6.5
Unit
Unit
m
m
mA
mA
nC
°C
°C
°C
°C
nF
nF
nF
µs
V
A
A
A
A
V
A
A
A
A
A
A
A
A
A
A
A
V
V
V
V
V
V
1
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SEMiX604GAL12E4s Summary of contents
... SEMiX604GAL12E4s SEMiX ® 4s Trench IGBT Modules SEMiX604GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...
... SEMiX604GAL12E4s SEMiX ® 4s Trench IGBT Modules SEMiX604GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...
... SEMiX604GAL12E4s Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 16.11.2010 = ...
... SEMiX604GAL12E4s Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 0 – 16.11.2010 ...
... SEMiX604GAL12E4s SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...
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