SEMiX141KT16s SEMIKRON, SEMiX141KT16s Datasheet

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SEMiX141KT16s

Manufacturer Part Number
SEMiX141KT16s
Description
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMiX141KT16s

Family/system
SEMiX
Voltage (v)
1600
Current (a)
140
Case
SEMiX 1s
Switches
2
SEMiX141KT16s
Rectifier Thyristor Module
SEMiX141KT16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
• Power supply
© by SEMIKRON
SEMiX
substrate
control
®
1s
KT
Absolute Maximum Ratings
Symbol
Chip
I
I
i
V
V
V
(di/dt)
(dv/dt)
T
Module
T
V
Characteristics
Symbol
Chip
V
V
r
I
t
t
t
I
I
V
I
V
I
R
R
R
Module
R
M
M
a
w
T(AV)
TSM
2
DD
H
L
GT
GD
gd
gr
q
T
t
RSM
RRM
DRM
j
stg
isol
T
T(TO)
GT
GD
th(j-c)
th(j-c)
th(j-c)
th(c-s)
s
t
;I
RD
cr
cr
Rev. 0 – 07.10.2011
sinus 180°
10 ms
10 ms
T
T
AC sinus 50Hz
T
T
T
T
T
T
T
T
T
T
T
sin. 180°
Conditions
Conditions
T
V
per chip
per module
to heat sink (M5)
to terminals (M6)
j
j
j
j
j
j
j
j
j
j
j
j
j
j
D
= 130 °C
= 130 °C
= 25 °C, I
= 130 °C
= 130 °C
= 25 °C, I
= 130 °C
= 25 °C
= 25 °C, R
= 25 °C, d.c.
= 25 °C, d.c.
= 130 °C, d.c.
= 130 °C, d.c.
= 130 °C, V
= 0.67 * V
T
G
G
= 360 A
DRM
= 1 A, di
DD
= 33 
= V
T
T
T
T
T
T
1 min
1 s
per thyristor
per module
per thyristor
per module
per thyristor
per module
DRM
c
c
j
j
j
j
G
= 25 °C
= 130 °C
= 25 °C
= 130 °C
= 85 °C
= 100 °C
/dt = 1 A/µs
; V
RD
= V
RRM
min.
150
2.5
2
3
-40 ... 130
-40 ... 125
Values
57800
45000
0.075
3400
3000
1700
1600
1600
1000
4000
4800
typ.
140
105
200
120
100
200
145
1
2
5 * 9,81
max.
1.65
0.85
0.25
0.21
300
500
2.1
60
10
5
5
Unit
A/µs
V/µs
Unit
m/s²
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
A²s
A²s
m
Nm
Nm
mA
mA
mA
mA
mA
°C
°C
µs
µs
µs
A
A
A
A
V
V
V
V
V
V
V
V
V
g
1

Related parts for SEMiX141KT16s

SEMiX141KT16s Summary of contents

Page 1

... SEMiX141KT16s SEMiX ® 1s Rectifier Thyristor Module SEMiX141KT16s Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply KT © by SEMIKRON Absolute Maximum Ratings Symbol Conditions Chip °C c T(AV) sinus 180° ...

Page 2

... SEMiX141KT16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 2L: Power dissipation of one module vs. rms current Fig. 3L: Power dissipation of two modules vs. direct current 2 Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3R: Power dissipation of two modules vs. case temperature Rev. 0 – ...

Page 3

... SEMiX141KT16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 5: Recovered charge vs. current decrease Fig. 7: On-state characteristics © by SEMIKRON Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 8: Surge overload current vs. time Rev. 0 – 07.10.2011 3 ...

Page 4

... SEMiX141KT16s Fig. 9: Gate trigger characteristics SEMiX 1s This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON ...

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