IXFN80N60P3 IXYS, IXFN80N60P3 Datasheet

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IXFN80N60P3

Manufacturer Part Number
IXFN80N60P3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFN80N60P3

Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.07
Ciss, Typ, (pf)
13100
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
SOT-227B
Polar3
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiPerFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 8mA
= 40A, Note 1
GS
DS
= 0V
t = 1s
DSS
= 0V
, T
TM
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFN80N60P3
600
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
Typ.
600
600
±30
±40
200
960
150
66
40
35
30
2
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
5.0
50 μA
70 mΩ
4 mA
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
Low
miniBLOC with Aluminum Nitride
Isolation
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Rectifier
Low Q
Low R
Low Drain-to-Tab Capacitance
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
DS(on)
DSS
Intrinsic Gate Resistance
E153432
G
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
D = Drain
S
70mΩ Ω Ω Ω Ω
600V
66A
250ns
D
DS100356(07/11)
S

Related parts for IXFN80N60P3

IXFN80N60P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 40A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN80N60P3 Maximum Ratings 600 = 1MΩ 600 GS ±30 ±40 66 200 ≤ 150° 960 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... I = 40A 56 DSS D 48 0.05 Characteristic Values Min. Typ. JM 1.4 13.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN80N60P3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.13 °C/W °C/W Max 320 A 1.5 V 250 ns μ ...

Page 3

... Value vs 125º 25º 100 120 140 160 180 IXFN80N60P3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - ...

Page 4

... T = 125ºC J 120 25ºC - 40ºC 100 5.5 6.0 6.5 7 25ºC J 0.9 1.0 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss IXFN80N60P3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 300V 40A 10mA 100 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.01 0.1 Pulse Width - Seconds IXFN80N60P3 1 10 IXYS REF: F_80N60P3(W9) 3-10-11 ...

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