IXFT15N100Q3 IXYS, IXFT15N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFT15N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFT15N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 1.05
• Ciss, Typ, (pf): 3250
• Qg, Typ, (nc): 64
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 690
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
100
50
45
40
35
30
25
20
15
10
18
16
14
12
10
10
8
6
4
2
0
5
0
0.3
4
0
0.4
4.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
= 1 MHz
5
0.5
5
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
15
J
0.7
= 125ºC
T
6
J
V
V
= 125ºC
V
DS
SD
GS
6.5
0.8
20
- Volts
- Volts
- Volts
0.9
7
25
25ºC
T
C iss
C oss
C rss
1.0
7.5
J
= 25ºC
30
1.1
8
- 40ºC
35
1.2
8.5
1.3
40
9
100
0.1
16
14
12
10
25
20
15
10
10
8
6
4
2
0
1
5
0
10
0
0
T
T
Single Pulse
J
C
V
I
I
D
G
= 150ºC
DS
= 25ºC
2
10
= 7.5A
= 10mA
= 500V
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
4
20
Limit
Fig. 8. Transconductance
6
30
Fig. 10. Gate Charge
Q
G
8
- NanoCoulombs
I
D
V
40
- Amperes
DS
100
10
- Volts
1ms
50
IXFH15N100Q3
IXFT15N100Q3
12
60
14
125ºC
100µs
T
J
25ºC
70
= - 40ºC
16
80
25µs
18
1,000
20
90