IXFZ140N25T IXYS, IXFZ140N25T Datasheet - Page 4

• Manufacturer Part Number: IXFZ140N25T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFZ140N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.017
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 445
• Rthjc, Max, (k/w): 0.28
• Package Style: DE475

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
3.5
0.2
0
0.3
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
4.0
0.4
0.5
10
Fig. 7. Input Admittance
T
4.5
0.6
J
Fig. 11. Capacitance
= 125ºC
15
0.7
V
V
V
SD
GS
DS
5.0
0.8
- Volts
- Volts
20
- Volts
0.9
T
J
T
= 125ºC
25
J
- 40ºC
= 25ºC
25ºC
5.5
1.0
C rss
C iss
C oss
1.1
30
1.2
6.0
35
1.3
1.4
6.5
40
1,000
100
10
220
200
180
160
140
120
100
1
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
T
T
Single Pulse
J
C
V
I
I
= 150ºC
20
D
G
DS
= 25ºC
R
20
= 70A
= 10mA
DS(
Fig. 12. Forward-Bias Safe Operating Area
= 125V
on
40
)
Limit
40
60
Fig. 8. Transconductance
60
80
10
Fig. 10. Gate Charge
100
Q
80
G
T
I
V
D
J
- NanoCoulombs
DS
120
- Amperes
= - 40ºC
- Volts
100
IXFZ140N25T
140
25ºC
125ºC
120
160
100
180
140
200
160
25µs
100µs
1ms
220
180
240
1,000
200
260