IXTN210P10T IXYS, IXTN210P10T Datasheet
IXTN210P10T
Specifications of IXTN210P10T
Related parts for IXTN210P10T
IXTN210P10T Summary of contents
Page 1
... GSS DSS DS DSS -10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTN210P10T Maximum Ratings -100 = 1MΩ -100 GS ±15 ±25 - 210 - 200 - 800 JM -100 3 ≤ 150° 830 - 55 ... +150 150 - 55 ... +150 2500 3000 1 ...
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... I 200 DSS D D25 155 0.05 Characteristic Values Min. Typ. JM 930 -12.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN210P10T SOT-227B (IXTN) Outline Max (M4 screws (4x) supplied 0.15 °C/W °C/W Max. - 210 A - 840 A -1.4 V 200 ns ...
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... D -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -200 -250 -300 -350 IXTN210P10T Fig. 2. Extended Output Characteristics @ -10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -50 - ...
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... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40º 25ºC J -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 - 1000 C iss - C oss C rss -25 -30 -35 -40 - Volts IXTN210P10T Fig. 8. Transconductance 300 40ºC J 250 200 25ºC 125ºC 150 100 -50 -100 -150 I - Amperes D Fig. 10. Gate Charge - 50V -9 ...
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... R = 1Ω -10V G GS 260 400 50V DS 220 300 180 200 140 100 100 -80 -85 -90 -95 -100 IXTN210P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω -10V 50V 125º 25º -50 -55 -60 -65 -70 -75 ...
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... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTN210P10T 0.1 1 IXYS REF: T_210P10T(A9)10-26-11 10 ...