IXTR210P10T IXYS, IXTR210P10T Datasheet
IXTR210P10T
Specifications of IXTR210P10T
Related parts for IXTR210P10T
IXTR210P10T Summary of contents
Page 1
... GSS DSS DS DSS -10V -105A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTR210P10T Maximum Ratings -100 = 1MΩ -100 GS ±15 ±25 -158 - 800 JM -100 3 ≤ 150° 390 - 55 ... +150 150 - 55 ... +150 300 ...
Page 2
... I = -105A 200 DSS D 155 0.15 Characteristic Values Min. Typ. JM 930 -12.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR210P10T ISOPLUS247 (IXFR) Outline Max 0.32 °C/W °C/W Max. - 210 A - 840 A -1.4 V 200 6,404,065 B1 ...
Page 3
... D -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -200 -250 -300 -350 IXTR210P10T Fig. 2. Extended Output Characteristics @ -10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 210A D -50 - ...
Page 4
... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40º 25ºC J -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 1000 - C iss - 100 oss - C rss 0.1 - -25 -30 -35 -40 - Volts IXTR210P10T Fig. 8. Transconductance 300 40ºC J 250 25ºC 200 125ºC 150 100 -50 -100 -150 I - Amperes D Fig. 10. Gate Charge - 50V - -105A ...
Page 5
... R = 1Ω -10V G GS 400 260 50V DS 300 220 180 200 140 100 100 -80 -85 -90 -95 -100 IXTR210P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω -10V 50V 125º 25ºC J -50 -55 -60 -65 -70 -75 -80 I ...
Page 6
... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds IXTR210P10T 1 10 100 IXYS REF: T_140P10T(A8)8-24-11 ...