IXGJ50N60B IXYS, IXGJ50N60B Datasheet - Page 4

• Manufacturer Part Number: IXGJ50N60B
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGJ50N60B

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 50
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 120
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.2
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268 (I3 - PAK)

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
0.001
0.01
0.00001
0.1
16
12
Figure 7. Dependence of E
6
5
4
3
2
1
0
8
4
0
1
0
0
Figure 9. Gate Charge
T
J
D=0.5
D=0.2
D=0.1
D=0.02
D=0.05
D=0.01
= 125°C
Single pulse
V
I
CE
C
= 25A
= 250V
20
40
Q
g
- nanocoulombs
I
C
80
40
- Amperes
0.0001
R
120
G
60
= 4.7Ω
ON
and E
160
80
Figure 11. IGBT Transient Thermal Resistance
OFF
E
E
D = Duty Cycle
on I
(ON)
(OFF)
200
0.001
100
C
Pulse Width - Seconds
12
10
8
6
4
2
0
4,835,592
4,850,072
4,881,106
4,931,844
100
600
0.1
10
1
Figure 8. Dependence of E
Figure 10. Turn-off Safe Operating Area
0.01
6
5
4
3
2
1
0
0
0
E
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
E
E
5,017,508
5,034,796
T
(ON)
(ON)
(ON)
J
100
= 125°C
10
200
T
R
dV/dt < 5V/ns
20
J
5,049,961
5,063,307
G
= 125°C
= 6.2 Ω
V
R
CE
G
I
I
I
C
C
C
300
=25A
= 100A
- Ohms
= 50A
- Volts
0.1
30
5,187,117
5,237,481
ON
400
40
and E
500
5,486,715
5,381,025
50
OFF
E
E
E
(OFF)
(OFF)
on R
(OFF)
600
60
6,306,728B1
1
G
12
10
8
6
4
2
0