IXGT72N60B3 IXYS, IXGT72N60B3 Datasheet - Page 3

• Manufacturer Part Number: IXGT72N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGT72N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 72
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.80
• Tfi, Typ, Tj=25°c, Igbt, (ns): 90
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

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120
100
120
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
0.6
0.6
I
8
C
0.8
0.8
= 120A
60A
30A
V
V
V
1.0
1.0
9
CE
CE
GE
@ 125ºC
@ 25ºC
- Volts
- Volts
- Volts
1.2
1.2
10
V
V
GE
GE
= 15V
1.4
1.4
= 15V
11
13V
11V
13V
11V
9V
1.6
1.6
12
1.8
1.8
5V
9V
7V
7V
T
J
13
2.0
= 25ºC
2.0
14
2.2
2.2
2.4
2.4
15
330
300
270
240
210
180
150
120
180
160
140
120
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
80
60
40
20
0
0
4.0
-50
0
V
GE
Fig. 2. Extended Output Characteristics
4.5
-25
V
1
= 15V
GE
Fig. 4. Dependence of V
= 15V
13V
11V
5.0
T
2
0
Fig. 6. Input Admittance
J
Junction Temperature
= 125ºC
T
J
- 40ºC
9V
7V
25ºC
- Degrees Centigrade
5.5
25
3
V
V
CE
GE
@ 25ºC
- Volts
- Volts
6.0
50
4
6.5
IXGT72N60B3
IXGH72N60B3
75
5
I
I
I
CE(sat)
C
C
C
= 30A
= 120A
= 60A
100
7.0
6
on
125
7.5
7
150
8.0
8