IXGH50N60B4 IXYS, IXGH50N60B4 Datasheet
IXGH50N60B4
Specifications of IXGH50N60B4
Related parts for IXGH50N60B4
IXGH50N60B4 Summary of contents
Page 1
... CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 100 50 230 = 10Ω ≤ CES 300 -55 ... +150 150 -55 ...
Page 2
... TO-220 Outline Max. .209 .102 .098 .055 1 = Gate Pins Gate 3 = Emitter .084 .123 .031 .845 .640 .800 .177 .144 .216 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405 B2 6,759,692 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXGH50N60B4 2 = Collector 2 - Drain 7,005,734 B2 7,157,338B2 7,063,975 B2 ...
Page 3
... Fig. 4. Dependence of V Junction Temperature V = 15V 72A 36A 18A C -50 - Degrees Centigrade J Fig. 6. Input Admittance 4.0 4.5 5.0 5.5 6.0 6.5 7 Volts GE IXGH50N60B4 = 25ºC J 11V 10V CE(sat) 75 100 125 150 40ºC J 25ºC 125ºC 7.5 8.0 8.5 9.0 9.5 ...
Page 4
... C ies oes 40 C res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...
Page 5
... Ohms G Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature d(on) Ω 15V 400V 72A Degrees Centigrade J IXGH50N60B4 4.5 4 3.5 3 2.5 2 1 800 d(off) 700 V = 15V GE 600 500 400 300 200 100 30 35 400 370 ...
Page 6
... V = 15V 400V 72A 36A 105 115 125 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 25º 125º ...