IXGH56N60A3 IXYS, IXGH56N60A3 Datasheet

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IXGH56N60A3

Manufacturer Part Number
IXGH56N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGH56N60A3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
150
Ic110, Tc=110°c, Igbt, (a)
56
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
315
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.75
Rthjc, Max, Igbt, (°c/w)
0.375
Package Style
TO-247
GenX3
Ultra-Low Vsat PT IGBT for up to
5 kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
GES
J
JM
stg
L
SOLD
GE(th)
CE(sat)
CES
CGR
GEM
d
d
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
TM
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting torque
Test Conditions
I
I
V
V
I
C
C
C
C
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C (Chip Capability)
= 110°C
= 25°C
= 25°C, 1ms
600V IGBT
= 15V, T
= 250μA, V
= 250μA, V
= V
= 0V, V
= 44A, V
CES,
VJ
V
GE
GE
GE
= 125°C, R
= ±20V
CE
CE
= 15V, Note 1
= 0V
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXGH56N60A3
V
CE
- 55 ... +150
- 40 ... +150
600
≤ 0.8
Characteristic Values
Min.
3.0
I
CM
Maximum Ratings
1.13/10
= 150
± 20
± 30
V
370
330
150
300
260
150
600
600
CES
56
1.22
1.22
6
Typ.
±100 nA
Max.
1.35
Nm/lb.in.
500 μA
5.0
50 μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
V
I
V
TO-247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Optimized for Low Conduction Losses
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
C
D
E
S
=
=
≤ ≤ ≤ ≤ ≤
C
TAB = Collector
600V
1.35V
56A
(TAB)
= Collector
DS100174(08/09)

Related parts for IXGH56N60A3

IXGH56N60A3 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 44A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGH56N60A3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 30 150 56 370 = 5Ω 150 G CM ≤ 0.8 • CES 330 - 55 ...

Page 2

... V 26 CES 1.00 310 315 3. 2.00 495 415 6.75 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH56N60A3 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source mJ Dim. Millimeter ns Min. A 4.7 550 ns A 2.2 6. ...

Page 3

... T = 25º 4.0 IXGH56N60A3 Fig. 2. Extended Output Characteristics @ T = 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig ...

Page 4

... C ies 120 100 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH56N60A3 Fig. 8. Gate Charge V = 300V 44A 10mA 100 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC ...

Page 5

... R = 5Ω 15V G GE 520 V = 480V CE 500 440 450 400 360 350 280 300 200 250 IXGH56N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 5Ω 15V 480V 125º 25º ...

Page 6

... IXGH56N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 5Ω 15V 480V 25ºC, 125º Amperes ...

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