IXGX64N60B3D1 IXYS, IXGX64N60B3D1 Datasheet
IXGX64N60B3D1
Specifications of IXGX64N60B3D1
Related parts for IXGX64N60B3D1
IXGX64N60B3D1 Summary of contents
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... CES CE CES ±20V 0V, V GES 50A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGK64N60B3D1 IXGX64N60B3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 64 400 = 3Ω 200 G CM ≤ 600V CE 460 -55 ... +150 150 -55 ... +150 1. 20..120 / 4.5..27 ...
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... Min. Typ 150°C 1 100°C 8 30V 35 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK64N60B3D1 IXGX64N60B3D1 TO-264 (IXGK) Outline Max 150 ns DIM INCHES MIN MAX 1 0.185 0.209 ns A1 ...
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... T = 25ºC J 160 140 120 100 IXGK64N60B3D1 IXGX64N60B3D1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 25A C -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...
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... IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 125ºC 120 140 160 180 200 10,000 1,000 100 400 500 600 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGK64N60B3D1 IXGX64N60B3D1 Fig. 8. Gate Charge 300V 50A ...
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... IXGK64N60B3D1 IXGX64N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature - - - - E E off Ω 15V 480V ...
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... IXGK64N60B3D1 IXGX64N60B3D1 vs. Junction Temperature I = 84A d(on) Ω 15V GE = 480V I = 42A 21A 105 T - Degrees Centigrade ...
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... I =120A 60A F 110 I = 30A F 100 90 80 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t versus -di rr 0.01 0.1 0.001 0.01 IXGK64N60B3D1 IXGX64N60B3D1 100° 300V =120A 60A 30A 1000 0 200 400 A/μs /dt F Fig. 23. Peak reverse current I ...