CM800HG-90R Powerex Inc, CM800HG-90R Datasheet - Page 7

no-image

CM800HG-90R

Manufacturer Part Number
CM800HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM800HG-90R

Prx Availability
RequestQuote
Voltage
4500V
Current
800A
Circuit Configuration
Single
Rohs Compliant
No
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
100
0.1
8
6
4
2
0
10
HALF-BRIDGE SWITCHING ENERGY
1
0
100
CHARACTERISTICS (TYPICAL)
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
CC
GE
V
R
Tj = 125°C, Inductive load
= 2800V, I
= ±15V, L
CC
G(on)
= 2800V, V
= 4.0Ω, L
10
E
S
off
C
Gate resistor [Ohm]
Emitter Current [A]
= 150nH
= 800A
S
GE
= 150nH
= ±15V
1000
20
I
t
rr
rr
30
10000
4
10000
1000
100
10
0
HALF-BRIDGE SWITCHING TIME
REVERSE BIAS SAFE OPERATING AREA
0.01
100
0.1
2500
2000
1500
1000
10
500
1
100
CHARACTERISTICS (TYPICAL)
0
0
V
R
L
Inductive load
S
CC
G(on)
V
Tj = 125°C, R
t
t
f
r
= 150nH, Tj = 125°C
CC
= 2800V, V
= 4.0Ω, R
≤ 3200V, V
Collector-Emitter Voltage [V]
1000
Collector Current [A]
CM800HG-90R
(RBSOA)
G(off)
GE
G(off)
GE
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
= ±15V
2000
= 15Ω
= 15Ω
= ±15V
1000
3000
HVM-1062
t
t
d(off)
d(on)
INSULATED TYPE
4000
10000
7 of 8
5000

Related parts for CM800HG-90R