MJD3055 Fairchild Semiconductor, MJD3055 Datasheet

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MJD3055

Manufacturer Part Number
MJD3055
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular MJE3055T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
I
P
T
T
V
I
I
I
h
V
V
f
f
C
B
CEO
CBO
EBO
T
T
FE
J
STG
CBO
CEO
EBO
C
CEO
CE
BE
Symbol
Symbol
= 2MHz (MIN), I
(on)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
*DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
C
= 500mA
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJD3055
I
V
V
V
I
I
V
V
V
V
C
C
C
CE
CB
EB
CE
CE
CE
CE
= 30mA, I
= 4A, I
= 10A, I
= 30V, I
= 70V, I
= 5V, I
= 4V, I
= 4V, I
= 4V, I
= 10V, I
Test Condition
1
B
B
C
= 0.4A
C
C
C
= 3.3A
B
E
E
C
= 0
= 4A
= 10A
= 4A
= 0
= 0
= 0
= 500mA
1.Base
D-PAK
2.Collector
- 55 ~ 150
Value
1.75
150
70
60
10
20
5
6
1
Min.
60
20
5
2
3.Emitter
Max.
100
0.5
1.1
1.8
50
2
8
I-PAK
Rev. A2, June 2001
Units
W
W
Units
V
V
V
A
A
MHz
C
C
mA
mA
V
V
V
V
A

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MJD3055 Summary of contents

Page 1

... Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD3055 1 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I ...

Page 2

... V (off)= 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Turn On Time 100 I (max (max 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0 Figure 2. Base-Emitter Saturation Voltage 30V 10 0 ...

Page 3

... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A2, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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