T86N Infineon Technologies, T86N Datasheet - Page 2

• Manufacturer Part Number: T86N
• Manufacturer: Infineon Technologies

Specifications of T86N

• Vdrm/ Vrrm (v): 1,200.0 - 1,800.0 V
• Itsm: 2,000.0 A
• Itavm: 86 (180 ° el sin)
• Housing: SW27 M12
• Configuration: Phase Control Thyristors / SCR

Elektrische Eigenschaften
Höchstzulässige Werte
Charakteristische Werte
Thermische Eigenschaften
Mechanische Eigenschaften
T 86 N
repetitive peak forward off-state and
reverse voltages
non-repetitive peak forward off-state
voltage
non-repetitive peak reverse voltage
RMS on-state current
average on-state current
surge current
I
critical rate of rise of on-state current
critical rate of rise of off-state voltage
on-state voltage
threshold voltage
slope resistance
gate trigger current
gate trigger voltage
gate non-trigger current
gate non-trigger voltage
holding current
latching current
forward off-state and reverse currents
gate controlled delay time
circuit commutated turn-off time
thermal resistance, junction to case
max. junction temperature
operating temperature
storage temperature
Si-pellet with pressure contact
tightening torque
weight, case design E
creepage distance
humidity classification
vibration resistance
outline, attached
Electrical properties
Maximum rated values
Characteristic values
Thermal properties
Mechanical properties
2
t-value
t
t
t
t
t
t
t
t
t
v
v
t
t
t
t
t
t
t
t
t
t
i
t
t
siehe Techn.Erl./see Techn. Inf.
DC
DIN 40040
f = 50 Hz
DIN 41 892-204B3
vj
vj
vj
c
c
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
GM
vj
vj
D
L
=25°C, i
= 85°C
= 56°C
=8 V, i
= -40°C...t
= -40°C...t
= +25°C...t
= 25°C, t
= t
= 25°C, t
= t
= t
= t
= t
= t
= 25 °C, v
= 25 °C, v
= t
= t
= 25 °C, v
= 25 °C,v
= t
=180° el, sin
=0,6 A, di
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max,
67%, v
GM
, t
, t
, v
, i
, v
, v
GM
v
= 0,6 A, di
p
p
p
p
T
D
D
D
D
D
DRM
D
D
D
vj max
vj max
= 10 ms
= 10 ms
= 400 A
= 10 ms
= 10 ms
= V
= 0,6 A, di
vj max
G
= 67% V
= 6 V
= 0,5 V
= 6 V, R
= 6 V
= 6 V
= 6 V, R
/dt =0,6 A/µs, t
, f = 50 Hz
DRM
, v
DRM
G
GK
DRM
R
/dt =0,6 A/µs
A
G
= V
= 5
/dt = 0,6 A/µs
10
RRM
g
= 20 µs
V
V
V
I
I
I
I
(di
(dv/dt)
v
V
r
I
V
I
V
I
I
i
t
t
R
t
t
t
M
G
D
TRMSM
TAVM
TSM
2
T
GT
GD
H
L
gd
q
vj max
c op
stg
T
DRM
DSM
RSM
T(TO)
GT
GD
, i
thJC
t
T
R
/dt)
, V
= V
= V
cr
cr
RRM
DRM
RRM
600 800 1000 1200
600 800 1000 1200
700 900 1100 1300
1400 1600 1800*
1400 1600 1800*
1500 1700 1900
-40...+125
-40...+130
max. 1,99
max. 0,28
max. 150
max. 200
max. 620
max. 1,4
max. 0,2
max. 0,3
typ. 200
typ. 180
max. 25
max. 5
max. 3
26500
20000
2300
2000
1000
200
127
150
125
2,6
86
20
50
1
8
°C/W
°C/W
A/µs
V/µs
m/s²
mm
m
A
A
mA
mA
mA
mA
Nm
mA
°C
°C
°C
µs
µs
2
2
C
V
V
V
A
A
A
A
A
V
V
V
V
s
s
g