T1651N Infineon Technologies, T1651N Datasheet - Page 2

• Manufacturer Part Number: T1651N
• Manufacturer: Infineon Technologies

Specifications of T1651N

• Vdrm/ Vrrm (v): 6,000.0 - 7,000.0 V
• Itsm: 48,000.0 A
• Itavm: 1670 (180 ° el sin)
• Housing: Dia 120mm height 35mm / Ceramic
• Configuration: Phase Control Thyristors / SCR Diode Discs

Date of Publication: 2011-05-02
Phase Control Thyristor
maximum RMS on-state current
surge current
critical rate of rise of on-state current
Durchlaßstrom-Grenzeffektivwert
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
Kritische Stromsteilheit
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltage
Grenzlastintegral
I²t-value
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
approved by: JP
prepared by: TM
Netz-Thyristor
Elektrische Eigenschaften
v
T

A

B

i
T

C

300A  i
Ln
i (
T

F
) 1
date of publication:
 3500A

D

i
Technische Information /
T
revision:
technical information
T1651N
2011-05-02
Revision: 5.0
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, i
T
5.Kennbuchstabe / 5
T
T
T
T
T
T
T
T
T
T
T
v
DIN IEC 60747-6
T
T
i
GM
D
vj
C
C
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= V
= 25 °C,i
= -40°C... T
= 85 °C
= 85 °C
= 70 °C
= 55 °C
= 25 °C, t
= T
= 25 °C, t
= T
= T
= T
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= T
= T
= 25°C, v
= T
5.0
= 25°C, v
= 3 A, di
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, v
, t
, t
, v
GM
, i
, v
, v
, v
GM
R
P
P
D
D
D
G
P
P
D
T
D
D
D
D
/dt = 6 A/µs, t
= V
= 3 A, di
= 10 ms
= 10 ms
= 10 ms
= 10 ms
= 12 V
= 12 V
= 12 V
= 3000A
= 0,67 V
= 3 A, di
vj max
= 12 V, R
= 12 V
= 0,5 V
= 0,5 V
RRM
th
G
letter H
DRM
DRM
G
DRM
/dt = 6 A/µs
/dt = 6 A/µs
GK
≥ 10 Ω
g
= 20 µs
V
I
I
I
I²t
(di
(dv
v
V
r
typ.
max.
I
V
I
V
I
I
i
t
D
TRMSM
TAVM
TSM
GT
GD
H
L
gd
T
T
DRM
(TO)
GT
GD
, i
T
D
/dt)
R
/dt)
,V
cr
RRM
cr
A
B
C -0,0199
D 0,0235
A
B
C 0,0346
D 0,0173
Max.
max.
Max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
0,774
0,000186
0,623
0,000271
typ.
typ.
typ.
50000
48000
12500
11500
0,417
0,477
6000
6500
7000
2620 A
1670
2030
2350
2000 V/µs
2,45
2,65
1,22
300 A/µs
350 mA
350 mA
500 mA
Seite/page: 2/11
1,2
2,5 V
0,4 V
20
10
3 A
2 µs
V
V
V
A
A
A
A
A
10³ A²s
10³ A²s
V
V
V
V
mΩ
mΩ
mA
mA