BTN 7963B Infineon Technologies, BTN 7963B Datasheet - Page 4

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BTN 7963B

Manufacturer Part Number
BTN 7963B
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTN 7963B

Packages
PG-TO263-7
Operating Range
4.5 - 28.0 V
Rds (on) (typ)
16.0 mOhm
Id(lim)
47.0 A
Iq (typ)
7.0 µA
Diagnosis
OV, OT, OC-failure flag, current sense
2
The BTN7963B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high
current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by
chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing
to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with
current sense, slew rate adjustment, dead time generation, smart clamping in overvoltage and protection against
overtemperature, undervoltage, overcurrent and short circuit. The BTN7963B can be combined with other
BTN7963B to form H-bridge and 3-phase drive configurations.
2.1
Figure 1
2.2
Following figure shows the terms used in this data sheet.
Figure 2
Data Sheet
Block Diagram
Block Diagram
Block Diagram
Terms
Terms
INH
SR
IS
IN
V
S
V
IN
V
INH
V
SR
Adjustment
V
Slewrate
Overtemp.
IS
detection
I
I
INH
I
IN
SR
I
IS
Undervolt.
detection
IN
INH
SR
IS
Overvolt.
detection
Digital Logic
G ND
VS
4
I
GND ,
Overcurr.
Detection
Overcurr.
Detection
I
Current
VS
Sense
HS
LS
, -I
I
D( LS)
D( HS)
O UT
LS off
Gate Driver
Gate Driver
HS
LS
HS off
I
OUT
V
SD (LS )
V
, I
DS (HS )
High Current PN Half Bridge
L
V
OUT
OUT
VS
GND
Rev. 1.0, 2009-09-09
Block Diagram
BTN7963B

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