BTM 7710G Infineon Technologies, BTM 7710G Datasheet - Page 8

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BTM 7710G

Manufacturer Part Number
BTM 7710G
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTM 7710G

Packages
PG-DSO-28
Operating Range
4.5 - 42.0 V
Rds (on) (typ)
110.0 mOhm
Id(lim)
15.0 A
Iq (typ)
5.0 µA
Diagnosis
OT-Status Flag
4
4.1
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are
driven by these stages and convert the logic signal into the necessary form for driving the power output stages.
The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard
N-channel vertical power-MOS-FETs.
4.2
The output stages consist of an low
diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as
single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
4.3
The outputs are protected against short circuit to ground and short circuit over load
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal
reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction
temperature and the drop voltage.
4.4
The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off
the output transistors and sets the status output to low.
4.5
When
transistors are switched off if the supply voltage
4.6
The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the
application circuit in
table “Diagnosis” are reported by switching the open drain output ST to low.
Data Sheet
V
S
reaches the switch-on voltage
Circuit Description
Input Circuit
Output Stages
Short Circuit Protection
Overtemperature Protection
Undervoltage Lockout
Status Flag
Figure 4 “Application Example BTM7710G” on Page
R
DSON
V
UVON
Power-MOS H-bridge. In H-bridge configuration, the D-MOS body
V
the IC becomes active with a hysteresis. The high-side output
S
drops below the switch off value
8
15. Various errors as listed in the
V
UVOFF
.
Rev. 1.0, 2008-06-27
BTM7710G

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