BTS 4160DGA Infineon Technologies, BTS 4160DGA Datasheet
BTS 4160DGA
Specifications of BTS 4160DGA
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BTS 4160DGA Summary of contents
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Overview 3 2 Block Diagram 5 3 Pin Configuration 6 3.1 Pin Assignment 6 3.2 Pin Definitions and Functions 6 3.3 Voltage and Current Definition 7 4 General Product Characteristics 8 4.1 Absolute Maximum Ratings 8 4.2 Functional Range ...
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Smart High-Side Power Switch Two Channel Device 1 Overview Basic Features • Fit for 12V application • Two Channel Device • Very low Stand-by Current • CMOS Compatible Inputs • Electrostatic Discharge Protection (ESD) • Optimized Electromagnetic Compatibility • Logic ...
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Protection Functions • Short circuit protection • Overload protection • Current limitation • Thermal shutdown • Overvoltage protection (including load dump) with external resistor V • Loss of ground and loss of • Electrostatic discharge protection (ESD) Application • All ...
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Block Diagram Channel 0 IN0 protection ST 0 Channel 1 IN1 ST 1 Figure 1 Block diagram for the BTS4160DGA Data Sheet voltage sensor internal power over supply temperature clamp for inductive load gate control driver & over current ...
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Pin Configuration 3.1 Pin Assignment Vs GND IN0 ST0 IN1 ST1 Vs Figure 2 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 2 GND Ground; Ground connection 3 IN0 Input channel 0 Input signal for channel 0. ...
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Voltage and Current Definition Figure 3 shows all terms used in this data sheet, with associated convention for positive values ST0 V ST1 Figure ...
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General Product Characteristics 4.1 Absolute Maximum Ratings 1) Absolute Maximum Ratings T = 25°C; (unless otherwise specified) j Pos. Parameter Voltages 4.1.1 Supply voltage 4.1.2 Reverse polarity Voltage 4.1.3 Supply voltage for short circuit protection Input pins 4.1.4 Voltage ...
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Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Functional Range Pos. ...
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Power Stage The power stages are built by an N-channel vertical power MOSFET (DMOS) with charge pump. 5.1 Output ON-State Resistance R The ON-state resistance DS(ON) shows the dependencies for the typical ON-state resistance. The behavior in reverse polarity ...
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Inductive Output Clamp When switching OFF inductive loads with high side switches, the voltage because the inductance intends to continue driving the current. To prevent the destruction of the device due to high voltages, there is a voltage clamp ...
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Maximum Load Inductance During demagnetization of inductive loads, energy has to be dissipated in the BTS4160DGA. This energy can be calculated with following equation Following equation simplifies under the assumption of R The energy, which is ...
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Electrical Characteristics Power Stage Electrical Characteristics: Power Stage - +150 C. Typical values are given Pos. Parameter 5.4.1 ON-State Resistance per channel 5.4.2 Nominal load current per channel ...
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Protection Mechanisms The device provides embedded protective functions. Integrated protection functions are designed to prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions ...
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Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. The current in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logical pins ...
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I L(LIM) I L(SCr) Figure 11 Current limitation function of the time Data Sheet OFF(SC BTS4160DGA Protection Mechanisms Current limitation with diag full.vs Rev. 1.0, 2008-03-18 ...
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Electrical Characteristics Protection Functions Electrical Characteristics: Protection - +150 C. Typical values are given Pos. Parameter Loss of ground 6.6.1 Output leakage current while GND disconnected Reverse polarity ...
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Diagnostic Mechanism For diagnosis purpose, the BTS4160DGA provides a status pin per channel. 7.1 ST 0/1 Pin BTS4160DGA status pins are an open drain, active low circuit “hard” failure mode occurs (Short circuit to GND / Over ...
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If the channel is OFF, the output is no longer pulled down by the load and recognized by the device as open load. The voltage threshold is given switched to a logical low ST01(L) Figure 13 Open ...
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ST 0/1 Signal in case of Over Temperature In case of over temperature, the junction temperature reaches the thermal shutdown temperature T In that case, the ST 0/1 signal is toggling between IN V OUT ...
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Electrical Characteristics Diagnostic Functions Electrical Characteristics: Diagnostics - +150 C. Typical values are given Pos. Parameter Load condition threshold for diagnostic 7.3.1 Open Load detection threshold in ...
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Input Pins 8.1 Input Circuitry The input circuitry is CMOS compatible. The concept of the Input pin is to react to voltage transition and not to voltage threshold. With the Schmidt trigger impossible to have the device ...
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Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. V ...
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Package Outlines 1.27 +0.08 0.41 -0.06 14 8.69 Index Marking 1) Does not include plastic or metal protrusion of 0.25 max. per side Figure 18 PG-DSO-14-37 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide ...
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Revision History Version Date Changes 1.0 2008-03-18 Creation of the data sheet Data Sheet 25 BTS4160DGA Revision History Rev. 1.0, 2008-03-18 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...