BTS 3142D Infineon Technologies, BTS 3142D Datasheet - Page 3

• Manufacturer Part Number: BTS 3142D
• Manufacturer: Infineon Technologies

Specifications of BTS 3142D

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 4.6 A
• Rds (on) (max): 28.0 mOhm
• Id(lim) (min): 24.0 A

Datasheet
1 @ 6 cm 2 cooling area
2 Device switched on into existing short circuit (see diagram Determination of I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Electrical Characteristics
Parameter
at T
Characteristics
Drain source clamp voltage
T
Off-state drain current T
V
Input threshold voltage
I
I
On state input current
On-state resistance
V
V
On-state resistance
V
V
Nominal load current
T
Nominal load current
V
Current limit (active if V
V
D
D
j
j
DS
IN
IN
IN
IN
IN
IN
= - 40 ...+ 150, I
= 1.2 mA, T
= 1.2 mA, T
< 150°C, V
j
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
= 32 V, V
= 25°C, unless otherwise specified
D
D
D
D
= 4.6 A, T
= 4.6 A, T
DS
DS
IN
IN
j
j
= 4.6 A, T
= 4.6 A, T
= 25 °C
= 150 °C
= 10 V, T
= 0 V
= 0.5 V, T
= 12 V, t
D
= 10 mA
j
j
DS
= 150 °C
= 25 °C
j
j
j
m
= 150 °C
= 25 °C
= -40 ... +150°C
A
>2.5 V)
C
= 85 °C, SMD
= 200 µs
= 85 °C, T
2)
j
< 150°C
1)
3
Symbol
V
I
V
I
R
R
I
I
I
DSS
IN(on)
D(Nom)
D(ISO)
D(lim)
DS(AZ)
IN(th)
DS(on)
DS(on)
Smart Low Side Power Switch
min.
12.6
D(lim) ). If the device is in on condition
1.3
0.8
4.6
42
30
-
-
-
-
-
-
Power HITFET BTS 3142D
Values
typ.
1.5
1.7
10
27
54
23
46
45
-
-
-
-
Rev. 1.3, 2006-12-22
max.
2.2
55
20
30
34
68
28
56
55
-
-
-
Unit
V
µA
V
µA
mΩ
A